// Define Section
Process best {
   voltage = 1.32  ; // as voltage
   temp    = 0     ; /* as temperature */
   Vtn     = 0.272 ; // nmos Vt
   Vtp     = 0.272 ; // pmos Vt
   Corner  = "";
};

Process typical {
   voltage = 1.2   ; // as voltage
   temp    = 25    ; /* as temperature */
   Vtn     = 0.208 ; // nmos Vt
   Vtp     = 0.208 ; // pmos Vt
   Corner  = "";
};

Process worst {
   voltage = 1.08  ; // as voltage
   temp    = 125   ; /* as temperature */
   Vtn     = 0.192 ; // nmos Vt
   Vtp     = 0.192 ; // pmos Vt
   Corner  = "";
};

Signal   std_cell   {
   unit =   REL        ;    // relative value
   Vh     = 1.0 1.0    ;    // 100% rise/fall
   Vl     = 0.0 0.0    ;
   Vth    = 0.5 0.5    ;    // 50% rise/fall
   Vsh    = 0.8 0.8    ;
   Vsl    = 0.2 0.2    ;
   tsmax =  3.0        ;    // maximum output slew rate
};

Simulation std_cell {
   transient      = 1n 100n 100p ;
   dc             = 0.24 0.96 0.1;
   bisec          = 6.0n 6.0n 100p ; // binary search
   resistance     = 10MEG;
};

Index    DEFAULT_INDEX {
   slew    = 10p 25p 50p 75p 100p; 
   load    =  5f 10f 50f 100f  1p;
};

Group    CK_SLW {
   PIN = *.CK ;
};

Group   DEFAULT_GROUP {
   CELL = * ;
};

Margin   m0 {
   slew    = 1.0 0.0 ;
   delay   = 1.0 0.0 ;
   power   = 1.0 0.0 ;
   cap     = 1.0 0.0 ;
};

Nominal n0 {
   delay   = 0.5 0.5 ; // as rise fall
   power   = 0.5 0.5 ;
   cap     = 0.5 0.5 ;
};

// Control Section
//
set process (best,typical,worst) {
   simulation = std_cell  ;
   index      = DEFAULT_INDEX ;
   signal     = std_cell  ;
   margin     = m0    ;
   nominal    = n0    ;
};

set index (best,typical,worst) {
   Group(DEFAULT_GROUP) = DEFAULT_GROUP ;
   Group(CK_SLW)        = CK_SLW ;
};