tcsh$ spectre -h diode ************** Junction diode ************** The junction diode model includes nonlinear junction capacitance and reverse breakdown. Sample Instance Statement: d0 (dp dn) pdiode l=3e-4 w=2.5e-4 area=1 Sample Model Statement: model pdiode diode is=1.8e-5 rs=1.43 n=1.22 nz=2.31 gleak=6.2e-5 rsw=10 isw=6.1e-10 ibv=0.95e-3 tgs=2 ik=1.2e7 fc=0.5 cj=1.43e-3 pb=0.967 mj=0.337 cjsw=2.76e-9 vjsw=0.94 jmax=1e20 This device is supported within altergroups. Synopsis: Name ( a c ) ModelName ... In forward operation, the voltage on the anode (`a') is more positive than the voltage on the cathode (`c'). Model Synopsis: model ModelName diode ... =================== Instance Parameters =================== 1 area Junction area factor (alias=lv1). 2 perim Junction perimeter factor. 3 l=1e-6 m Drawn length of junction. 4 w=1e-6 m Drawn width of junction. 5 m=1 Multiplicity factor. 6 scale=1 Scale factor. 7 region=on Estimated operating region. Spectre outputs number (0-2) in a rawfile. Possible values are off, on and breakdown. [7m--More--[27m8 region0=on Estimated operating region. Spectre outputs number (0-2) in a rawfile.. Possible values are off, on and breakdown. 9 trise (C) Temperature rise from ambient. 10 lm=0.0 m Length of metal capacitor. 11 lp=0.0 m Length of polysilicon capacitor. 12 wm=0.0 m Width of metal capacitor. 13 wp=0.0 m Width of polysilicon capacitor. 14 isnoisy=yes Should device generate noise. Possible values are no and yes. The instance parameter `scale', if specified, overrides the value given by the `option' parameter `scale'. If the model parameter `allow_scaling' is set to `yes', the `area', `perim', `l', and `w' parameters are scaled by `scale'. By default `allow_scaling' is set to `no' and no scaling of geometry parameters occurs. The values of `area', `perim', `l', and `w' parameters printed by Spectre are those given in the input, and these values might not have the correct units if the scaling factors are not unity. ================ Model Parameters ================ Model selector parameters: 1 level=1 Model selector. 1 = Junction, 2 = Fowler-Nordheim, 3 = Junction + additional metal and polysilicon capacitances. 2 dcap=2 Depletion capacitance equations selector (hspice compatibility flag only ). 3 bv_enable=1 Flag to enable the breakdown of diode. 1=breakdown effect enabled, 0=breakdown effect disabled. 4 compatible=spectre Spice compatibility flag. Possible values are spectre, spice2, spice3, cdsspice, hspice, spiceplus, eldo, sspice, mica, tispice and pspice. Process parameters: 5 etch=0 m Narrowing due to etching per side. 6 etchl=0 m Length reduction due to etching per side. 7 l=1e-6 m Drawn length of junction. 8 w=1e-6 m Drawn width of junction. Junction diode parameters: 9 js=1e-14 A/Area Saturation current. 10 is=`js' A Alias to `js'. 11 jsw=0 A/Perim Sidewall saturation current. 12 isw=`jsw' A Alias to `jsw'. [7m--More--[27m13 isp=`jsw' A Alias to `jsw'. 14 n=1 Emission coefficient. 15 ns=1 Sidewall emission coefficient. 16 ik=0.0 A/Area High-level injection knee current, alias to ikf. 17 ikf=0.0 A/Area High-level injection knee current, alias to ik. 18 ikp=`ik' A/Area High-level injection knee current for sidewall. 19 ikr=0 A/Area Reverse high-level injection knee current (hspice compatibility flag only). 20 area=1 Junction area factor. 21 perim=0 Junction perimeter factor. 22 allow_scaling=no Allow scale option and instance scale parameter to affect diode instance geometry parameters. Possible values are no and yes. Capacitive parameters: 23 tt=0 s Transit time. 24 cd=0 F/Area Linear capacitance. 25 cjo=0 F/Area Zero-bias junction capacitance. 26 vj=1 V Junction potential. (For Hspice, the default value is 0.8). 27 pb=`vj' V Alias to 'vj'. 28 m=0.5 Grading coefficient. 29 cjsw=0 F/Perim Zero-bias sidewall junction capacitance. 30 cjp=`cjsw' F Alias to `cjsw'. 31 vjsw=1 V Sidewall junction potential. (For Hspice, the default value is vj). 32 php=`vjsw' V Alias to `vjsw'. 33 mjsw=0.33 Sidewall grading coefficient. 34 fc=0.5 Forward-bias depletion capacitance threshold. 35 fcs=`fc' Coefficient for forward-bias depletion sidewall capacitance. 36 lm=0.0 m Length of metal capacitor (level=3 only). 37 lp=0.0 m Length of polysilicon capacitor (level=3 only). 38 wm=0.0 m Width of metal capacitor (level=3 only). 39 wp=0.0 m Width of polysilicon capacitor (level=3 only). 40 xm=0.0 m XM accounts for masking and etching effects (level=3 only). 41 xp=0.0 m XP accounts for masking and etching effects (level=3 only). 42 xoi=0.0 m Thickness of the polysilicon-to-bulk oxide. Units - nAngstram (level=3 only). 43 xom=0.0 m Thickness of the metal-to-bulk oxide. Units - nAngstram (level=3 only). 44 xw=0.0 m Accounts for masking and etching effects (level=3 only). 45 vjmin=0.1 Lowest value for built-in junction potential. Breakdown parameters: 46 bv=infinity V Reverse breakdown voltage. Note: bv=0 is not the same as bv=infinity. [7m--More--[27m47 vb=`bv' V Alias to `bv'. 48 ibv=0.001 A/Area Current at breakdown voltage. 49 nz=1 Emission coefficient for Zener diode. 50 bvj=infinity V Voltage at which junction breakdown warning is issued. 51 isr=0 A/m^2 Recombination current parameter. 52 ibvl=0 A/m^2 Low-level reverse breakdown current. 53 nbv=1 Reverse breakdown ideality factor. 54 nbvl=1 Low-level reverse breakdown ideality factor. Parasitic resistance parameters: 55 rs=0 Ohm Series resistance (/area). 56 rsw=0 Ohm Sidewall series resistance (/perim). 57 gleak=0 S Bottom junction leakage conductance (*area). 58 gleaksw=0 S Sidewall junction leakage conductance (*perim). 59 minr=0.1 Ohm Minimum series resistance. Temperature effects parameters: 60 tlev=0 DC temperature selector. 61 tlevc=0 AC temperature selector. 62 eglev=0 DC temperature selector, alias to tlev==2. 63 eg=1.11 V Band gap. Note: when bandgap is not specified, the default value is dependent on the temperature. It is 1.11 at temp=27C. 64 gap1=7.02e-4 V/C Band gap temperature coefficient. 65 gap2=1108 C Band gap temperature offset. 66 xti=3 Saturation current temperature exponent. 67 tbv1=0 1/C Linear temperature coefficient for `bv'. 68 tcv=`tbv1' 1/C Linear temperature coefficient for `bv'. 69 tbv2=0 C^-2 Quadratic temperature coefficient for `bv'. 70 tikf=0 1/C IKF temperature coefficient (linear). 71 tnom (C) Parameter measurement temperature. The default value is set by the `options' statement. 72 trise=0 C Temperature rise from ambient. 73 trs=0 1/C Linear temperature coefficient for parasitic resistance. 74 trs1=0 1/C Alias to trs. 75 tmod=tnom C Model temperature. 76 trs2=0 C^-2 Quadratic temperature coefficient for parasitic resistance. 77 tgs=0 1/C Linear temperature coefficient for leakage conductance. 78 tgs2=0 C^-2 Quadratic temperature coefficient for leakage conductance. 79 cta=0 1/C Junction capacitance temperature coefficient. 80 ctp=0 1/C Sidewall junction capacitance temperature coefficient. [7m--More--[27m81 pta=0 V/C Junction potential temperature coefficient. 82 ptp=0 V/C Sidewall junction potential temperature coefficient. 83 ttt1=0.0 1/C First order temperature coefficient for tt hspice. 84 ttt2=0.0 C^-2 Second order temperature coefficient for tt hspice. 85 tm1=0.0 1/C First order temperature coefficient for Mj hspice. 86 tm2=0.0 C^-2 Second order tempperature coefficient for Mj hspice. Junction diode model control parameters: 87 jmelt=1.0 A/Area Explosion current. 88 imelt=`jmelt' A Alias to `jmelt'. 89 expli=`jmelt' A Alias to `jmelt'. 90 jmax=1 A/Area Maximum allowable current. 91 imax=`jmax' A Alias to `jmax'. 92 dskip=yes Use simple piece-wise linear model for diode currents below 0.1*`iabstol'. Possible values are no and yes. Fowler-Nordheim diode parameters: 93 if=1e-10 A/V^nf Forward Fowler-Nordheim current coefficient (*area). 94 ir=`if' A/V^nr Reverse Fowler-Nordheim current coefficient (*area). 95 ecrf=2.55e10 V/m Forward critical field (For hspice compatibility, the unit is V/cm, default value is 1.0e8 ). 96 ecrr=`ecrf' V/m Reverse critical field (For hspice compatibility, the unit is V/cm). 97 ef=`ecrf' V/m Alias of `ecrf'. 98 er=`ecrr' V/m Alias of `ecrr'. 99 nf=2 Forward voltage power. 100 nr=`nf' Reverse voltage power. 101 tox=1e-8 m Thickness of insulating layer. TSMC Stand Alone model parameters: 102 rod=`rs' Ohm Alias to Rs (Ohmic series resistance). 103 jts=0 A/m^2 Bottom trap-assisted saturation current density (with Level=1 and StAlone flag=1). 104 jtssw=0 A/m^2 Sidewall trap-assisted saturation current density (with Level=1 and StAlone flag=1). 105 mrs=0.4 Fitting parameter for Rseff (with Level=1 and StAlone flag=1). 106 njts=60 Non-ideality factor for Jts (with Level=1 and StAlone flag=1). 107 njtssw=60 Non-ideality factor for Jtssw (with Level=1 and StAlone flag=1). 108 xts=0.055 Power dependence of Jts on temperature (with Level=1 and StAlone flag=1). 109 xtssw=0.055 Power dependence of Jtssw on temperature (with Level=1 and StAlone flag=1). 110 tnjts=0.15 Temperature coefficient for Njts (with Level=1 and StAlone flag=1). 111 tnjtssw=0.15 Temperature coefficient for Njtssw (with Level=1 and StAlone flag=1). 112 trod=0 Temperature coefficient for Rod(Rs) (with Level=1 and StAlone flag=1). [7m--More--[27m[K Noise model parameters: 113 kf=0 Flicker noise (1/f) coefficient. 114 af=1 Flicker noise (1/f) exponent. Shrink Parameters: 115 shrink=1.0 Shrink factor. 116 shrink2=0.0 Area shrink parameter. Trap-assisted tunneling current parameters: 117 jtun=0 A Tunneling saturation current per area. 118 jtunsw=0 A Sidewall tunneling saturation current per unit junction periphery. 119 ntun=30 Tunneling emission coefficient. 120 xtitun=3.0 Exponent for the tunneling current temperature. 121 egtun=eg V Parameter for tunneling current at reverse region. Safe Operating Areas Parameters: 122 bv_max=infinity V Maximum allowed voltage across two terminals. 123 fv_max=infinity V Maximum allowed forward voltage across two terminals. 124 keg=1.0 V The factor that is multiplied by EG to calculate the tunneling bandgap. 125 gmin_m_scaling=no Allow gmin to be scaled by m or not. Possible values are no and yes. Both of these parameters have current density counterparts, `jmax' and `jmelt', that you can specify if you want the absolute current values to depend on the device area. ================= Output Parameters ================= 1 bveff (V) Effective reverse breakdown voltage. 2 tempeff (C) Effective temperature for a single device. 3 meff Effective multiplicity factor (m-factor). [7m--More--[27m[K ========================== Operating Point Parameters ========================== 1 region=on Estimated operating region. Spectre outputs number (0-2) in a rawfile. Possible values are off, on and breakdown. 2 region0=on Estimated operating region. Spectre outputs number (0-2) in a rawfile.. Possible values are off, on and breakdown. 3 v (V) Extrinsic diode voltage. 4 i (A) Resistive diode current (alias=lx1). 5 pwr (W) Power dissipation. 6 res (Ohm) Resistance of intrinsic diode. 7 resp (Ohm) Resistance of intrinsic sidewall diode. 8 cap (F) Junction capacitance. 9 capp (F) Sidewall junction capacitance. 10 cd (F) Total junction capacitance (alias=lx5). 11 ctotal (F) Total junction capacitance (alias=lx5). 12 gd (S) Equivalent conductance (alias=lx2). 13 qd (Coul) Charge of diode capacitor (alias=lx3). 14 vdio (V) Voltage across diode (VD), excluding RS (alias=lx0). sml 2/13/2021