Made in South Korea: Graphene memristor memory cells on a flexible plastic substrate

IEEE Spectrum has just reported on the successful fabrication of graphene-based memory cells on a flexible plastic substrate by Sung-Yool Choi and his research team working at the Electronics and Telecommunications Research Institute in Daejeon, South Korea. The memristor memory closely resembles that of HP, using a simple crosspoint-array interconnect, with a memory cell made of graphene oxide instead of HP’s titanium oxide at each crosspoint. In both cases, the memristor effect results from the force of an electric field that pushes oxygen atoms back and forth within the memory cell. The experimental graphene cells measure 50 microns, so they’re more than 1000 times larger than those developed by HP, but the graphene cells are made with a much simpler, non-IC process technology and the cells are deposited on flexible plastic, which opens the technology up to many, many interesting--and potentially low-cost--uses.

You’ll find the IEEE Spectrum article here.


More Memristor articles in the Denali Memory Report:
The 6-minute video guide to memristors (must-see video)
HP’s memristor finds a commercial semiconductor vendor: Hynix

Rice University reports that silicon oxide also good for memristors
Rice U’s silicon-oxide memristor more phenomenon than device, for now