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S-parameter bonding wire issue

Binhngo1210
Binhngo1210 over 4 years ago

Hi everybody, 

I am designing LNA and run into the issue of bonding wire S- parameter. The test bench for input LNA is described as below capture. 

My bonding wire inductor is about L=0.44 nH/ Q= 25 @ 2.5 GHz, to test whether performance is improved if using multiple bonding wires, I connect 10 wires (just for simulation, not realistic bonding case) in parallel (as seen in the captured) 

I hope that its equivalent L_bonding will be L/10 and in fact, with the simulation result ( use differential testbench 2 ports to measure equivalent L bonding) my prediction is correct (figure 1) - about 44p with Q almost similar 

However, it is quite troublesome when I do simulation with that S-parameter file, the Gain is dropped to 0 as well as input matching disappears, but the Gain gets normally recovered (Figure 2) once I replace that L bonding S-param file by an inductor having the same specs( Q=25, L = 44p @ 2.5 G).  It is quite weird and subtle to me even the passivity of the bonding wire S-param file was carefully checked. 

My question: Is that correct if I equivalate those 10 bonding wires by arraying 10 files S-parameters  2 ports in parallel? and How can i deal with it ? 

Very much appreciated receiving your help! 

Thanks

Binh Ngo


(capture 1)

figure 1

Figure 2

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  • ShawnLogan
    ShawnLogan over 4 years ago

    Dear Binhngo210,

    Binhngo1210 said:
    My question: Is that correct if I equivalate those 10 bonding wires by arraying 10 files S-parameters  2 ports in parallel? and How can i deal with it ? 

    No - you need to create a single S-parameter file with all 10 bonding wires if I understand your question correctly. I have direct experience with such a design using multiple wire bonds (in this case as part of a VCO), and if you simply try to model them as 10 distinct S-parameter files in parallel you are totally overlooking the mutual indutances between the wire bonds. The mutual inductance terms will be quite significant as their magnetic fields will overlap.

    Did I understand your question correctly Binhngo1210?

    Shawn

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  • Binhngo1210
    Binhngo1210 over 4 years ago in reply to ShawnLogan
    Unknown said:
    Did I understand your question correctly Binhngo1210?

    Yes it is totally correct. 
    as your recommendation, I ran the EM simulation for 10 wire bonds, the overall L is  about 0.25 nH and Q = 50 @ 2.5 GHz. This value is a way much smaller then LG off chip (25n, Q = 31), however after post-layout simulation the gain also dropped to lower than 0 dB and S11 move to lower matching point (the link below shows its performance, please take a look)..

    there is a weird thing that when i switch the position of L bonding and L off chip (can see as the above capture post), the gain came back . I am quite confused for what  the simulation is going on@@. Have y ever met this bug? 

    https://drive.google.com/file/d/1x4pjbnWAwggzOZlCMHLnjRZuG72Y1Xk0/view?usp=sharing

    bonding performance : 

    https://drive.google.com/file/d/1kHDoicHdJsedspkNMmvbXeR_GPXVbkaq/view?usp=sharing

    log file: 

    https://drive.google.com/file/d/10MxdScg91t-fkgcYkSYYalRkw-Qht6Xo/view?usp=sharing

    Thanks for your time.

    Binh Ngo

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  • ShawnLogan
    ShawnLogan over 4 years ago in reply to Binhngo1210

    Dear Binhngo1210,

    Binhngo1210 said:

    as your recommendation, I ran the EM simulation for 10 wire bonds, the overall L is  about 0.25 nH and Q = 50 @ 2.5 GHz. This value is a way much smaller then LG off chip (25n, Q = 31), however after post-layout simulation the gain also dropped to lower than 0 dB and S11 move to lower matching point (the link below shows its performance, please take a look)..

    there is a weird thing that when i switch the position of L bonding and L off chip (can see as the above capture post), the gain came back . I am quite confused for what  the simulation is going on@@. Have y ever met this bug? 

    To be very honest, I am not clear at all about what you are indicating  with respect to "LG", "off-chip", and "gain" as  I do not understand the test bench diagram in your initial post. It looks as if you have several S-parameter file based ports connected in parallel - maybe only one is used in each simulation? Further, I don't see the amplifier nor any matching network and have no idea where you are measuring the gain.

    Your output log file, was useful and there are two specific comments I can make that will impact your findings...

    1. You are using a very old version of the Cadence tools (Cadence (R) Virtuoso (R) Spectre (R) Circuit Simulator Version 14.1.0.848.isr14 32bit -- 6 Oct 2015) and there have been many, many improvements as to how it handles S-parameter files. I highly recommend you consider getting access to a much more recent version! This alone, may explain some of your simulation results that you consider "weird".

    2. More importantly, however, your log file clearly indicates your S-parameter file "HHM1902B1.s3p" does NOT have a DC term!

    The specific log file contents are:

    Warning from spectre during DC solution estimation, during DC analysis, during SP analysis `sp'.

        WARNING (CMI-2134): Risky extrapolation to DC of data given in S-parameter file `/home1/mpw7911/03_sp_files/balun/HHM1902B1.s3p'.

        WARNING (CMI-2134): Risky extrapolation to DC of data given in S-parameter file `/home1/mpw7911/03_sp_files/balun/HHM1902B1.s3p'.

    I may have overlooked it, but perhaps some of your other S-parameter files are also missing DC terms. I recommend several items:

    a. View your S-parameter files in ViVA using a more recent version of the Cadence tools. ViVA can read an S-parameter file directly and plot it in rectandular or polar coordinates. Verify that a DC term exists and the S-parameters are consistent with what you expect for each port. Please view the methodology to view S-parameter files in ViVA directly at URL:

    support.cadence.com/.../ArticleAttachmentPortal

    b. If not, re-generate the S-parameter files of interest and verify that sufficient frequency resolution exists, that there is a DC term, and the resulting plots of its S-parameters are consistent with what you expect.

    c. Study the following document from the Cadence On-line support site entitled "Seven Habits of Highly Successful S-parameters". This excellent document by Mrs. Tawna Wilsey of Cadence outlines a number of potential S-parameter file issues as well as a number of troubleshooting tips when using an S-parameter file in a simulation. You should get familiar with this document if you are planning to run many S-parameter analyses. The document is at URL:

    https://support.cadence.com/apex/ArticleAttachmentPortal?id=a1O3w000009bgt4EAA&pageName=ArticleContent

    or in Webinar format:

    https://support.cadence.com/apex/ArticleAttachmentPortal?id=a1O3w000009y0apEAA&pageName=ArticleContent

    Shawn

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  • Binhngo1210
    Binhngo1210 over 4 years ago in reply to ShawnLogan

    Dear  Shawn Logan, thanks for your very helpful suggestion. However, even resolve all problems regarding tools as well as obtain completeness of wire bonding-S param files. I cannot get the Gain of LNA performance as my expectation. I try all ways but did not know whether such fixings are enough.

    First of all, I replaced mmsim141 with mmsim161 and that is the highest version that I can upgrade (because this tool is managed by another center in my university, and they installed 2 versions on the server). 

    then, I replaced the balun S param files "HHM1902B1.s3p" as your mention in No.2  with an available ideal balun component: "balun_com"  in "rfLib" to avoid the DC issue.

    second, for bonding wire S param files, I regenerated the S param file such that it includes DC frequency point. 

    finally, to avoid a similar problem of passivity or DC point  with L, C S param files, I replaced it with components from analog Lib).. --> finally, it really did not work out 

    However, when I switch positions of L_bonding and L_G (L_bonding is on the left of LG) as illustrated in testbench (violet arrow) and run again the circuit with post-layout netlist of 03_LNA_RX_TB --> the gain is recovered (yellow line in figure 1) and the violet line in figure 1 represents for the Gain that L_bonding is on the right of LG.
    I am aware that the result is unreasonable because when we reduce the effect of bonding the gain should be as close as to the post-layout simulation performance and the L_bonding should be a part of L_G because its inductance is very tiny and Q is high enough in this simulation. 

    I will include the test bench below. Could you hint me another check? 

     test-bench 

    Thanks for your time, 
    Binh Ngo 

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