problems managing models with subcircuits and duplicate named parts

Hello, I am new at this, and trying to set up libraries with models.

I am currently working with two mosfet models downloaded fromSTmicro...both are subcircuit models with additional simple components modeled, and these simple components are named the same in each library and therefore wind up being "duplicate" models when both parts are in the library or design, therefore causing the modeling to be incorrectly applied between the parts. Here are the 2 models, seperated by "end of modelling" :

* MODELLING FOR STN2NF10
 
.SUBCKT STN2NF10 1 2 3
LG 2 4  7.5E-09
LS 12 3 7.5E-09
LD 6 1  4.5E-09
RG 4 5  4.001
RS 9 12 0.325E-02
RD 7 6  0.142
RJ 8 7  0.445E-03
CGS 5 9   0.419E-09
CGD 7 10  0.467E-09
CK  11 7  0.307E-10
DGD 11 7 DGD
DBS 12 6 DBS
DBD  9 7 DBD
MOS  13 5 9 9 MOS L=1u W=1u
E1  10 5 101 0 1
E2  11 5 102 0 1
E3  8 13 POLY(2) 6 8 6 12 0 0 0 0  0.321
G1  0 100 7 5 1u
D1  100 101  DID
D2  102 100  DID
R1  101 0  1MEG
R2  102 0  1MEG
.ENDS STN2NF10
 
.MODEL MOS NMOS
+ LEVEL = 3
+ VTO   = 4.184
+ PHI   = 0.827
+ IS    = 0.1E-12
+ JS    = 0
+ THETA = 0.995
+ KP    = 15.084
+ ETA   = 0.199E-02
 
.MODEL DGD D
+ IS    = 0.1E-12
+ CJO   = 0.171E-10
+ VJ    = 0.754
+ M     = 0.367
.MODEL DBD D
+ IS    = 0.1E-12
+ CJO   = 0.202E-10
+ VJ    = 0.755
+ M     = 0.335
.MODEL DBS D
+ IS    = 0.1E-12
+ BV    = 117
+ N     = 1
+ TT    = 0.699E-07
+ RS    = 0.505E-02
.MODEL DID D
+ IS    = 0.01E-12
+ RS    = 0
+ BV    = 127
 
* END OF MODELLING

* MODELLING FOR STN3NF06
.SUBCKT STN3NF06 1 2 3
LG 2 4  7.5n
LS 12 3 7.5n
LD 6 1  4.5n
RG 4 5  4.901
RS 9 12 0.321E-02
RD 7 6  0.301E-01
RJ 8 7  0.125E-02
CGS 5 9   0.474E-09
CGD 7 10  0.259E-09
CK  11 7  0.669E-10
DGD 11 7 DGD
DBS 12 6 DBS
DBD  9 7 DBD
MOS  13 5 9 9 MOS L=1u W=1u
E1  10 5 101 0 1
E2  11 5 102 0 1
E3  8 13 POLY(2) 6 8 6 12 0 0 0 0  0.778
G1  0 100 7 5 1u
D1  100 101  DID
D2  102 100  DID
R1  101 0  1MEG
R2  102 0  1MEG
.ENDS STN3NF06
 
.MODEL MOS NMOS
+ LEVEL = 3
+ VTO   = 3.867
+ PHI   = 0.941
+ IS    = 0.1P
+ JS    = 0
+ THETA = 0.375
+ KP    = 16.164
 
.MODEL DGD D
+ IS    = 0.1E-12
+ CJO   = 0.843E-11
+ VJ    = 0.697
+ M     = 0.389
.MODEL DBD D
+ IS    = 0.1E-12
+ CJO   = 0.248E-12
+ VJ    = 0.789
+ M     = 0.306
.MODEL DBS D
+ IS    = 0.1E-12
+ BV    = 65
+ N     = 1
+ TT    = 0.707E-07
+ RS    = 0.577E-01
.MODEL DID D
+ IS    = 0.01E-12
+ RS    = 0
+ BV    = 75
 
* END OF MODELLING

 As you can see, both models are using parts named nmos, dgd, dbd, and dbs.

Each mosfet will simulate correctly individually if the other library is not configured, but when both libraries are configured, the one part will use the parameters from the other instead of its own...for example the 1st mosfet should have a lower gain in an amplifier circuit, but with both libraries present it chooses the wrong parameters and has the higher gain of the 2nd mosfet instead. Help?