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is there any possibility a nmos vth<vth0?

i've see many books that vthn=vth0+r(sqarroot(-2X+vsb)-sqarroot(-2x)). where x is fermi level.

to nmos, r>0, thus, vthn>vth0 is right.

but i've meet a strange thing in simulation in ADE with HspiceD. the vth0 is 2.7V, while the vthn ADE give to me in opertion point is 1.8V.

is there ang possibility thing like this happen?

thank you to anyone who can give me a explain. thank you very much!

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Cooktime over 13 years ago

NMOS could work in the subthreshold region especially for those low power consumption circuit, but I doubt the Vth is 2.7V without the body effect? That's very large. What's the value of your Vdd?
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Cooktime over 13 years ago

NMOS could work in the subthreshold region especially for those low power consumption circuit, but I doubt the Vth is 2.7V without the body effect? That's very large. What's the value of your Vdd?
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