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igs noise of NMOS in 65nm

Hi all,

Noise analysis of a differential amplifier, which is in right OP, shows the noise due to igs and igd is even higher than fliker noise at 1kHz.

spectrum of the noises (igs and igd) is proportional to 1/f^2.

Device                   Param    Noise Contribution    % Of Total
/Iint1/Iopamp/M1inp      igs      1.07235e-13           25.51
/Iint1/Iopamp/M1inn      igs      1.03778e-13           24.69
/Iint1/Iopamp/M1inp      igd      9.57556e-14           22.78
/Iint1/Iopamp/M1inn      igd      9.2761e-14            22.07
/Iint1/Iopamp/Mpload1    fn       3.9511e-15            0.94
/Iint1/Iopamp/Mpload2    fn       3.80531e-15           0.91

However, igs=183 fA and igd=-4 fA in /Iint1/Iopamp/M1inp
How comes such a small gate currents produce that much noise?

Any ideas?

Thanks,

PS. I am using 65nm CMOS tech using BSIM4 models

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Andrew Beckett over 13 years ago

Presumably there's a lot of gain from that current to the output of the circuit? Note that the noise summary gives the output referred noise, rather than the noise at the noise source.
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Andrew Beckett over 13 years ago

Presumably there's a lot of gain from that current to the output of the circuit? Note that the noise summary gives the output referred noise, rather than the noise at the noise source.
Andrew.
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