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Measure leakage current

ntus

Hi everyone,

Im new to this. Can anyone please tell me how to measure leakage current for a NAND gate? 

Parents

  • Hi,

    In general I would set static operating conditions and measure the gate current and the currents in the supply

    of the NAND. If you want to get a more detailed view you need to probe the individual currents of the devices

    within the NAND, e.g. IGD,IGS,IGB for all devices and IDS for the closed devices. This should give you a

    pretty good idea about the leakage mechanisms and the values should be available in the results browser

    after a simple DCOP analysis.

     

    Best Regards

     

    Andi

     

Reply

  • Hi,

    In general I would set static operating conditions and measure the gate current and the currents in the supply

    of the NAND. If you want to get a more detailed view you need to probe the individual currents of the devices

    within the NAND, e.g. IGD,IGS,IGB for all devices and IDS for the closed devices. This should give you a

    pretty good idea about the leakage mechanisms and the values should be available in the results browser

    after a simple DCOP analysis.

     

    Best Regards

     

    Andi

     

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