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Does u0 and vth0 viewed in simulation result reflect default constant value or the ones already considering any Layout-dependent effects in such environment: tsmc65nm, BISM4.5 model, Spectre7.2 ?

Alex Liao

After any Spectre simulation, does U0 in model parameter field mean the low-field mobility of the very original one or the one infulenced by STI/WPE or any other issues? Simply put, [url=http://postimg.org/image/l2oe8rrvh/][img]s6.postimg.org/.../url],

This image gives the equation of u0 under STI's influence. Is the u0 in ADE Result => Print Model Parameter list reflecting U0ref (may be a constant) or U0(already consider STI influence). If the case is the former (the initial constant) and then U0( influenced by STI) is invisiable to user; if it is the latter(influenced by STI) and then U0(the initial constant) is invisiable.  How about the vth0? Does the simulation result reflect final vth0 considering any layout or other issues or only give default value which is used to compute effecitive vth0 via inner equation?

 

Regards,

Alex 

Parents

  • Hi Andrew,

     

    If so, the model parameters keep unchanged. But those effects has to be reflected in certain way in real simulation. Which part has been changed under those effects from simulation perspective?

    Is my following understanding correct? All those layout dependent issues are considered in such way that they are reflected in electrical or performance-related indicators or parameters.  For example, the mobility affected by  STI are considered in calculation of Ids. The Ids in older technology which does not consider any STI is different from the Ids in modern advanced technology whcih does consider STI effect. This impact is physically reflected in the calculation of Ids in modern simulation. While all model parameters still keep the same.

    From simulation side, are there more ways to see or compare STI impact, any indicators?

     

    Regards,

    Alex. 

Reply

  • Hi Andrew,

     

    If so, the model parameters keep unchanged. But those effects has to be reflected in certain way in real simulation. Which part has been changed under those effects from simulation perspective?

    Is my following understanding correct? All those layout dependent issues are considered in such way that they are reflected in electrical or performance-related indicators or parameters.  For example, the mobility affected by  STI are considered in calculation of Ids. The Ids in older technology which does not consider any STI is different from the Ids in modern advanced technology whcih does consider STI effect. This impact is physically reflected in the calculation of Ids in modern simulation. While all model parameters still keep the same.

    From simulation side, are there more ways to see or compare STI impact, any indicators?

     

    Regards,

    Alex. 

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