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High current in Id-Vg simulation

mahaque

Hi,

I am trying to simulate a testbench having just a MOSFET and voltage sources and ground. But the drain current seems to be quite higher than expected. What might be the reason of it and what should I do to solve this?

Thanks in advance!

  • Nobody will be able to guess what your problem is without more information. Please read the forum guidelines and provide some appropriate extra data.

    Andrew

  • I have simulated a SiC power MOSFET is Saber. Now I am trying to simulate the same power MOSFET using spectre using the same testbench including the mosfet, gate voltage source(from 0-14 V), drain voltage source(20V) and ground. Both the simulations should provide the same outputs since I have used the same parameter values in both Saber and Spectre.But Spectre shows a higher current in Id-Vg curve. So I am trying to figure out what I might have been missing in the simulation. Please feel free to ask if you need any further information to help me out.

  • I suggest you contact customer support who can guide you through the detail we need - seeing the models, netlist and results are likely to be important here, and I doubt you can do that in a public forum - unless the model is your own to share.

    Regards,

    Andrew.

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