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Drain Current Noise Power VS gm

Horace Chen

Hello all,

            I tried to extract drain current noise power of a single RF NMOS transistor in order to plot PSD versus gm with different gate width. I'm doing with sp, hb and hbnoise while it seems like I can only get the voltage noise. The attached pictures are my testbench and some settings. How can I get the drain current noise versus gm? Should I use ideal dcfeed/dcblock or non-ideal? And how can I plot output noise current power through noise analysis of ADE L? My version is IC6.1.7 - CAT35 with 22FDX PDK. Thank you!

Regards,

Horace Chen

  • Andrew Beckett

    You need to use probe and select the instance to measure the current through. This could be a resistor, but since you don't want a resistor, place an iprobe from analogLib in series with the drain and then select the iprobe as the probing device.

    Regards,

    Andrew.

  • Horace Chen
    in reply to Andrew Beckett

    Thanks for the reply! I've added iprobe and now I can derive the current noise. However, although I changed gm and gate width my current noise seems to be a constant. For the lumped element, should I use ideal component (DCfeed/DCblock) or just use cap/ind? Since I found that if  I use cap/ind instead DCfeed/DCblock current noise will change according to gm and W.

    Thank you again for your timely help!

    Regards,

    Horace.

  • Horace Chen
    in reply to Andrew Beckett

    I've solved all the problem, thx!

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