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IDS,on in MOS1 model

LukiLeu

I am currently creating a MOS1 model. I have now the problem, that the calculated DC operating point parameters for my model in the subthreshold region do not match parameters which are obtained with some simple "hand-calculation" formulas. Especially the Ids seems to be suspicious. According to the documentation of Spectre Ids is calculated as follows:

How is IDS,on exactly calculated by the simulator? In the documentation it states only: where IDS,ON is the drain current evaluated at VGS = VON

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