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CAN THE DIFFUSION REGION EXCEED THE PR BOUNDARY IN HEIGHT?

I am trying to design a CMOS inverter. I have taken the PR boundary length as 1.52u. When I add my diffusion regions for both NMOS and PMOS, it exceeds the PR boundary at the top and bottom as the width of my NMOS and PMOS are 900nm and 1.37um respectively. I am not sure if this is correct. Someone, please help me.

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