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  3. BJT models HiCUM (bht)

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BJT models HiCUM (bht)

sidm
sidm over 2 years ago

Hello, 

I came across a Spectre NPN transistor model that uses the hicum bht directive. I am looking for more information on bht level and it also applied to HBTs. I wasn't able to find any information online or the Support website so any information regrading this bht model directive will be appreciated. 

regards

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  • mschw
    mschw over 2 years ago

    Hi,

    you can get information about the model from the command line with spectre -h bht or in the Spectre Circuit Simulator Components and Device Models Reference (spectremod.pdf). The file is available on Cadence Support and also shipped in the installation directory of Spectre $SPECTRE_HOME/doc/spectremod/spectremod.pdf.

    Regards,

    Matthias

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  • ShawnLogan
    ShawnLogan over 2 years ago

    Dear sidm,

    sidm said:
    I came across a Spectre NPN transistor model that uses the hicum bht directive. I am looking for more information on bht level and it also applied to HBTs. I wasn't able to find any information online or the Support website so any information regrading this bht model directive will be appreciated. 

    Did you happen to check the development site for the HICUM (High Current Model)

    www.iee.et.tu-dresden.de/iee/eb/hic_new/hic_intro.html

    An example of the model parameters for for the Spectre bht model (bht is the designation of the HICUM model for spectre) is on page 27 of the 2012 document at:

    www.google.com/url?sa=t&rct=j&q=&esrc=s&source=web&cd=&cad=rja&uact=8&ved=2ahUKEwj0l-Onuf_-AhWRElkFHT3QAFwQFnoECBkQAQ&url=https%3A%2F%2Fwww.iee.et.tu-dresden.de%2Fiee%2Feb%2Fforsch%2FModels%2Fworkshop0512%2Fcontr_2012%2FSchroter_HICUM_Ovw_slides.pdf&usg=AOvVaw1eAkLrjfmwo9HHoLOzVKwi

    I believe the designation "bht0" is a version of the Level 0 HICUM model. It was first described in the journal article:

    M. Schroter, S. Lehmann, H. Jiang and S. Komarow, "HICUM/Level0 - a simplified compact bipolar transistor model," Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, USA, 2002, pp. 112-115, doi: 10.1109/BIPOL.2002.1042898.

    The model is a simplified version of the full model, known as HICUM/L2. The HICUM/L2 model is described in a companion paper:

    M. Schroter, "HICUM a Scalable Physics-based Compact Bipolar Transistor Model", December 2001, [online] Available: www.iee.et.tu.dresden.de/.../eb.

    This is not my area of expertise, but my curiosity drove me to find out. I hope it is somewhat helpful sidm.

    Shawn

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  • sidm
    sidm over 2 years ago in reply to ShawnLogan

    Thank you very much Shawn and Matthias for the reply and sharing the source of information on BHT. If a device model is using the BHT directive (model abchicum bht type=npn ) is there a way to check from the Spectre model if the device is a HBT (Heterojunction bipolar transistor)?

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  • sidm
    sidm over 2 years ago in reply to ShawnLogan

    Thank you very much Shawn and Matthias for the reply and sharing the source of information on BHT. If a device model is using the BHT directive (model abchicum bht type=npn ) is there a way to check from the Spectre model if the device is a HBT (Heterojunction bipolar transistor)?

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  • ShawnLogan
    ShawnLogan over 2 years ago in reply to sidm

    Dear sidm,

    sidm said:
    f a device model is using the BHT directive (model abchicum bht type=npn ) is there a way to check from the Spectre model if the device is a HBT (Heterojunction bipolar transistor)?

    Having designed in both conventional bipolar and SiGe technologies, I can add at least one comment...

    If you are including SiGe devices in your definition of an HBT, then I can't think of a way to differentiate its model from that of a conventional bipolar device. The thresholds and overall behaviors are quite similar. In other words, just by studying its model parameters or even performing a set of DC simulations for its salient parameters, I do not know any unique characteristic that will suggest it is a heterojunction as opposed to a homojunction based device. If you are trying to distinguish between a conventional Si bipolar device and a III-V device, then the device model parameters or simulated DC characteristics will reflect the unique attributes  of a III-V device and you might be able to determine if it is a III-V based device or a Si/SiGe based device.

    Just my thought anyway sidm!

    Shawn

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  • sidm
    sidm over 2 years ago in reply to ShawnLogan

    thanks Shawn.

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