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PVT corner for worst case power analysis

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archive over 18 years ago

Hello,

I am not sure about what PVT corner I should use for worst case power analysis. I have identified two things in LIB files which are affected by PVT corner selection and affects power analysis:

  • K_factors for internal and leakage power;

  • Transition time.

Temperature selection is ok! When we increase temperature we increase power consumption since both k_factors and transition time are directly proportional to temperature (power consumption of a cell depends on input transition time)

The problem is for process and voltage selection:

  • Transition time decreases when we increase operating voltage (inversely proportional), in contrast of k_factors. So, I should select low or high voltage for worst case power analysis?

  • Transition time increases when we increase process value (directly proportional), in contrast of k_factors. So, I should select low or high process for worst case power analysis?

Besides that, most of LIB files describes PVT corners only for STA and these corners are different for power analysis. So, it is needed define new corners in LIB files to perform worst case power analysis?

Anyone can help me?
Thanks in advance...

 


Originally posted in cdnusers.org by clsantos
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    archive over 18 years ago

    Simulation based analysis is by far the most accurate, but care is needed to ensure that you really have accurate use-cases for your block or chip in simulation.

    For example, I'm heavily involved with SoC integration, and although my team has testcases for IP blocks in the chip, these are typically only stressing the interface so we can ensure the integration is correct. It is less common for us to run simulations stressing each IP to ensure that it is performing it's own internal functions correctly (really depends on the source and complexity of the IP: I might test a Uart to the fullest extent, but a DSP that has been used on other products may only have a brief interface test). Thus if I were to use these sims as a basis for power-analysis, I may or may not get an accurate picture of the power consumption. So I tend to have to base my analysis on statistical analysis.

    As for which point to use for the actual analysis, yes I understand your problem. I don't think there is a right or wrong answer. I personally run my analysis at the worst-case timing PVT point, and don't worry if this is the worst power point. If I run all of my analysis at the same operating conditions, then the effect of design changes is surely valid. Also, since both my synthesis and layout tools are using this PVT to do optimisation for timing, then it makes sense to base all of my analysis here.

    Of course, if you are trying to see what effect making the design [i]high-Vt and std Vdd[/i] compared to [i]low-Vt with reduced Vdd[/i], then you could well see "savings" which are caused by the different operating points.

    You say that you've tried making dummy PVT points that match (suspected) power corners rather than timing corners. Can you run your analysis and tell us what difference P, V and T have on estimated dynamic and static power? My own gut feel is that the power increase caused by higher transition times will be less than that caused by higher voltages since power is just proportional to frequency, but is proportional to the square of the voltage.

    Chris


    Originally posted in cdnusers.org by Chris_Byham
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  • archive
    archive over 18 years ago

    Simulation based analysis is by far the most accurate, but care is needed to ensure that you really have accurate use-cases for your block or chip in simulation.

    For example, I'm heavily involved with SoC integration, and although my team has testcases for IP blocks in the chip, these are typically only stressing the interface so we can ensure the integration is correct. It is less common for us to run simulations stressing each IP to ensure that it is performing it's own internal functions correctly (really depends on the source and complexity of the IP: I might test a Uart to the fullest extent, but a DSP that has been used on other products may only have a brief interface test). Thus if I were to use these sims as a basis for power-analysis, I may or may not get an accurate picture of the power consumption. So I tend to have to base my analysis on statistical analysis.

    As for which point to use for the actual analysis, yes I understand your problem. I don't think there is a right or wrong answer. I personally run my analysis at the worst-case timing PVT point, and don't worry if this is the worst power point. If I run all of my analysis at the same operating conditions, then the effect of design changes is surely valid. Also, since both my synthesis and layout tools are using this PVT to do optimisation for timing, then it makes sense to base all of my analysis here.

    Of course, if you are trying to see what effect making the design [i]high-Vt and std Vdd[/i] compared to [i]low-Vt with reduced Vdd[/i], then you could well see "savings" which are caused by the different operating points.

    You say that you've tried making dummy PVT points that match (suspected) power corners rather than timing corners. Can you run your analysis and tell us what difference P, V and T have on estimated dynamic and static power? My own gut feel is that the power increase caused by higher transition times will be less than that caused by higher voltages since power is just proportional to frequency, but is proportional to the square of the voltage.

    Chris


    Originally posted in cdnusers.org by Chris_Byham
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