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  3. Decap cells

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Decap cells

gops
gops over 16 years ago
Can any body please tell me in detail how decap cells helps in reducing IR drop .
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  • moh sadeghi
    moh sadeghi over 16 years ago
    Hi Gopakumar

    Decap cells are typically poly gate transistors where source and drain are connected to the ground rail, and the gate is connected to the power rail.  

    As already mentioned on the forum, when there is an instantaneous switching activity the charge required moves from intrinsic and extrinsic local charge reservoirs as oppose to voltage sources. Extrinsic capacitances are decap cells placed in the design. Intrinsic capacitances are those present naturally in the circuit, such as the grid capacitance, the variable capacitance inside nearby logic, and the neighborhood loading capacitance exposed when the P or N channel are open.

    One drawback of decap cells is that they are very leaky, so the more decap cells the more leakage. Another drawback, which many designers ignore, is the interaction of the decap cells with the package RLC network. Since the die is essentially a capacitor with very small R and L, and the package is a hug RL network, the more decap cells placed the more chance of tuning the circuit into its resonance frequency. That would be trouble, since both VDD and GND will be oscillating. I have seen designs fail because of this

    Designers typically place decap cells near high activity clock buffers, but I recommend a decap optimization flow where tools study charge requirements at every moment in time and figure out how much decap to place at any node. This should be done while taking package models into account to ensure resonance frequency is not hit.

    Thanks

    Mohammad
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  • vs8747
    vs8747 over 6 years ago in reply to moh sadeghi

    Hi Mohammad

    Nicely explained but my query is that 

    Is it preferable to connect directly power  to gate terminal ?

    and could you please elaborate on how decaps have more leakage?

    Thanks

    vs8747

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  • vs8747
    vs8747 over 6 years ago in reply to moh sadeghi

    Hi Mohammad

    Nicely explained but my query is that 

    Is it preferable to connect directly power  to gate terminal ?

    and could you please elaborate on how decaps have more leakage?

    Thanks

    vs8747

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  • HTRIVEDI
    HTRIVEDI over 6 years ago in reply to vs8747

    This is a very important question. Gate oxide directly to supply is an ERC violation. Is this waived in the digital environment, or is there any series protection with the gate of the decap to protect it under ESD. The lower the voltage, the thinner the gate oxide, so even though the gate oxide rupture potential could be higher than supply spec. there is still a risk. Does anyone have a pointer to a useful layout design that protects the decap under ESD? Or is it purely gate to supply rail.

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