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regarding photodiode simulation

i'm working on photodiode simulation. i found that in current equation, the current is depending on the junction depth,mobility,doping concentrations,carrier lifte times. initially i took some random values for above parameters. i run the simulaiton and got the results. but my doubt is how exactly predict the values of doping concentration,carrier lifetimes. please help me i stuck with this problem. i simulated the photo response in pspice and i'm using umc180nm library.

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