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Discussion on Poly-Endcap in CMOS Layout

yogeshjaiswalCAD
Greetings,
I hope we are all learning and growing together. I would like to share some thoughts on the concept and concerns related to the Poly-Endcap in CMOS layouts ( Option A) when both sides are considered under ideal conditions.
Option A (ideal conditions) & Option B ( Non ideal conditions)
Now, let's examine the situation when the Poly-Endcap is not the same in a CMOS layout ( Option B) under non-ideal conditions on both sides.
Could you please share your insights on the implications if the Poly-Endcap differs in high-speed or RF layouts?
Specifically, I’m interested in the potential impacts on performance and fabrication at lower technology nodes. I have attached the CMOS layout in this email (ideal & non-Ideal condition).
Thank you!
BeSt regards,
Yogesh Jaiswal

  • Greetings Team,

    It means a lot when you take time from your busy schedule to reply to such answers; no one can imagine :)

    I have succeeded in this quest with your help ... 

    Answer to the above post by the Foundry expert :

    Poly-endcap should be the same for matched transistors because it directly affects effective channel length and parasitics — mismatched endcaps break device symmetry and worsen mismatch. Staggered diffusion contacts for high-speed signal switching with low capacitance

    Regards & Cheers,

    Yogesh Jaiswal 

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