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Is the device capacitance bias-dependent or independent?

Alex Liao
Hi, I would like to know if the device intrinsic capacitance like Cgs bias-dependent or independent. Giving say, bias 400mV or 500mV (common source circuit with Vgs = 400mV or 500mV) for 65nm technology, is the Cgs the same or different and why？

Thanks,
Alex
Parents

  • Hi Shawn,

     I understand your thoughts. 

    Initially, I thought the way you did. But later, when I think of the partial derivatives of charges I have developed another idea. Even the Spectre only relies on the BSIM model, the interconnect parasitic (Res. & Cap.) from routing or local interconnect may affect the nodes voltage such as Vgs. This might change the operating state of devices and thus the result of those operating point capacitances, Cgs and others.

     

    What do you think on this analysis?

     

    Thanks,

    Alex   

Reply

  • Hi Shawn,

     I understand your thoughts. 

    Initially, I thought the way you did. But later, when I think of the partial derivatives of charges I have developed another idea. Even the Spectre only relies on the BSIM model, the interconnect parasitic (Res. & Cap.) from routing or local interconnect may affect the nodes voltage such as Vgs. This might change the operating state of devices and thus the result of those operating point capacitances, Cgs and others.

     

    What do you think on this analysis?

     

    Thanks,

    Alex   

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