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Issue with Level=3 MOS model in Spectre

milind123

Hi, 

    I am trying to simulate the FET model that I downloaded from the manufacturer. I have always been able to use Spice models by using the statement:

simulator lang=spice

before the model. But this time it complained on a statement:

B11 3 2 I= V(13,0)*I(V11)

It said that the master was unknown. After struggling a bit I decided to just write the model subckt as spectre syntax. I did that. For 2 .model statements inside I just put the "simulator lang=spice" statement before them and then

"simulator lang=spectre" after them

This helped the simulation to run but the FET characteristics are totally off. I know the model is fine since I simulated it in Spice. The FET characteristic is totally set by the nmos .model defined in the subcircuit. The model is a level=3 model and now I am considering whether I need to translate the model to Spectre. But I am not able to find how to translate a level=3 spice model to spectre because don't know what master name to use in the model statement.

Any guidance in this would be greatly appreciated.

Parents

  • I joined your two posts because they appear to be asking the same thing.

    Note that the Spectre model for a level 3 MOS is "mos3" (see "spectre -h mos3")

    Andrew

  • in reply to Andrew Beckett

    I am simulating in an old version of spectre:

    Version 15.1.0.803.isr18 64bit -- 21 Jun 2017

    I am simulating the following model:

    https://assets.nexperia.com/documents/spice-model/PSMN8R5-40MSD.lib

    After running it as a Spectre model the MOS characteristic does not look right, i.e. the MOS Ids-Vds characteristic is orders of magnitude different. My translated spectre model is pasted below:

    subckt PSMN8R5_40MSD D G S B

    * Package impedance
    LD (D 5) inductor l=20.00p
    RLD2 (D 5) resistor r=25.13m
    RLD1 (5 4) resistor r=5.000u
    LG (G 1) inductor l=1.509n
    RLG (G 1) resistor r=1.896
    LS (S 8) inductor l=440.0p
    RLS2 (S 8) resistor r=552.9m
    RLS1 (8 7) resistor r=450.0u

    * Drain,gate and source resistances
    RD (3 4) resistor r=5.913m TC1= 6.580m TC2= 1.004n
    RG (1 2) resistor r=805.9m
    RS (6 7) resistor r=1.000u
    RBULK (S B) resistor r=1.000u

    * Body Diode
    RBD (9 4) resistor r=1.911m TC1= 4.000m TC2= 23.00u
    DBD (7 9) D_DBD
    RDS (7 4) resistor r=40.00M TC1= -5.000m

    * Internal MOS
    M1 (3 2 6 6) MINT

    * Gate leakage and gate capacitance
    RGS (2 6) resistor r=200.0M
    CGS (2 6) capacitor c=927.5p

    * CGD
    C11 (11 12) capacitor c=1E-12
    V11 (11 0) vsource dc=0 type=dc
    B11 (3 2) bsource I=V(13)*I(V11)
    E11 (12 0 3 2) vcvs gain=1
    E12 13 0 vsource v = table(v(12), -20.0, 287.92, -16.0, 287.86, -15.0, 287.87, -12.0, 287.87, -10.0, 287.85, -8.0, 287.88, -6.0, 287.86, -5.0, 287.87, -4.0, 287.86, -3.0, 287.69, -2.0, 286.80, -1.0, 275.62, -0.5, 236.32, -0.2, 220.97, -0.1, 220.76, 0.0, 200.6204, 0.1, 180.444, 0.2, 180.7272, 0.5, 164.752, 1.0, 142.2876, 2.0, 108.7704, 3.0, 85.0832, 4.0, 67.9872, 5.0, 57.4872, 6.0, 51.7236, 8.0, 47.49, 10.0, 46.824, 12.0, 46.364, 15.0, 45.4972, 16.0, 45.2384, 20.0, 44.1484, 25.0, 43.1592, 30.0, 42.5252, 32.0, 42.3004)

    * E12 (13 0) TABLE {V(12)}
    * + (-20.0,287.92) (-16.0,287.86) (-15.0,287.87) (-12.0,287.87) (-10.0,287.84999999999997) (-8.0,287.88) (-6.0,287.86) (-5.0,287.87) (-4.0,287.86) (-3.0,287.69) (-2.0,286.79999999999995) (-1.0,275.61999999999995) (-0.5,236.31999999999996) (-0.2,220.97) (-0.1,220.76) (0.0,200.6204) (0.1,180.444) (0.2,180.72719999999995) (0.5,164.75200000000004) (1.0,142.2876) (2.0,108.7704) (3.0,85.08319999999999) (4.0,67.98720000000002) (5.0,57.4872) (6.0,51.72359999999999) (8.0,47.49) (10.0,46.824) (12.0,46.364000000000004) (15.0,45.4972) (16.0,45.23840000000001) (20.0,44.1484) (25.0,43.1592) (30.0,42.525199999999984) (32.0,42.300399999999996)


    model MINT mos3 Vto= 4.100 Kp= 167.8 Nfs= 1.062T Eta= 0.000
    + Level= 3 Gamma= 0.000 Phi= 600.0m Is= 1.000E-24 UO= 600.0
    + Js= 0.000 Pb= 800.0m Cj= 0.000 Cjsw= 0.000 Cgso= 0.000 Cgdo= 0.000 Cgbo= 0.000
    + Tox= 100.0n Xj= 0.000
    + Vmax= 403.3

    model D_DBD diode Bv= 44.00 Ibv= 250.0u Rs= 1.000u Is= 385.9f
    + N= 1.000 M= 392.5m VJ= 621.9m Fc= 500.0m Cjo= 1.592n Tt= 13.61n


    ends PSMN8R5_40MSD

Reply
  • in reply to Andrew Beckett

    I am simulating in an old version of spectre:

    Version 15.1.0.803.isr18 64bit -- 21 Jun 2017

    I am simulating the following model:

    https://assets.nexperia.com/documents/spice-model/PSMN8R5-40MSD.lib

    After running it as a Spectre model the MOS characteristic does not look right, i.e. the MOS Ids-Vds characteristic is orders of magnitude different. My translated spectre model is pasted below:

    subckt PSMN8R5_40MSD D G S B

    * Package impedance
    LD (D 5) inductor l=20.00p
    RLD2 (D 5) resistor r=25.13m
    RLD1 (5 4) resistor r=5.000u
    LG (G 1) inductor l=1.509n
    RLG (G 1) resistor r=1.896
    LS (S 8) inductor l=440.0p
    RLS2 (S 8) resistor r=552.9m
    RLS1 (8 7) resistor r=450.0u

    * Drain,gate and source resistances
    RD (3 4) resistor r=5.913m TC1= 6.580m TC2= 1.004n
    RG (1 2) resistor r=805.9m
    RS (6 7) resistor r=1.000u
    RBULK (S B) resistor r=1.000u

    * Body Diode
    RBD (9 4) resistor r=1.911m TC1= 4.000m TC2= 23.00u
    DBD (7 9) D_DBD
    RDS (7 4) resistor r=40.00M TC1= -5.000m

    * Internal MOS
    M1 (3 2 6 6) MINT

    * Gate leakage and gate capacitance
    RGS (2 6) resistor r=200.0M
    CGS (2 6) capacitor c=927.5p

    * CGD
    C11 (11 12) capacitor c=1E-12
    V11 (11 0) vsource dc=0 type=dc
    B11 (3 2) bsource I=V(13)*I(V11)
    E11 (12 0 3 2) vcvs gain=1
    E12 13 0 vsource v = table(v(12), -20.0, 287.92, -16.0, 287.86, -15.0, 287.87, -12.0, 287.87, -10.0, 287.85, -8.0, 287.88, -6.0, 287.86, -5.0, 287.87, -4.0, 287.86, -3.0, 287.69, -2.0, 286.80, -1.0, 275.62, -0.5, 236.32, -0.2, 220.97, -0.1, 220.76, 0.0, 200.6204, 0.1, 180.444, 0.2, 180.7272, 0.5, 164.752, 1.0, 142.2876, 2.0, 108.7704, 3.0, 85.0832, 4.0, 67.9872, 5.0, 57.4872, 6.0, 51.7236, 8.0, 47.49, 10.0, 46.824, 12.0, 46.364, 15.0, 45.4972, 16.0, 45.2384, 20.0, 44.1484, 25.0, 43.1592, 30.0, 42.5252, 32.0, 42.3004)

    * E12 (13 0) TABLE {V(12)}
    * + (-20.0,287.92) (-16.0,287.86) (-15.0,287.87) (-12.0,287.87) (-10.0,287.84999999999997) (-8.0,287.88) (-6.0,287.86) (-5.0,287.87) (-4.0,287.86) (-3.0,287.69) (-2.0,286.79999999999995) (-1.0,275.61999999999995) (-0.5,236.31999999999996) (-0.2,220.97) (-0.1,220.76) (0.0,200.6204) (0.1,180.444) (0.2,180.72719999999995) (0.5,164.75200000000004) (1.0,142.2876) (2.0,108.7704) (3.0,85.08319999999999) (4.0,67.98720000000002) (5.0,57.4872) (6.0,51.72359999999999) (8.0,47.49) (10.0,46.824) (12.0,46.364000000000004) (15.0,45.4972) (16.0,45.23840000000001) (20.0,44.1484) (25.0,43.1592) (30.0,42.525199999999984) (32.0,42.300399999999996)


    model MINT mos3 Vto= 4.100 Kp= 167.8 Nfs= 1.062T Eta= 0.000
    + Level= 3 Gamma= 0.000 Phi= 600.0m Is= 1.000E-24 UO= 600.0
    + Js= 0.000 Pb= 800.0m Cj= 0.000 Cjsw= 0.000 Cgso= 0.000 Cgdo= 0.000 Cgbo= 0.000
    + Tox= 100.0n Xj= 0.000
    + Vmax= 403.3

    model D_DBD diode Bv= 44.00 Ibv= 250.0u Rs= 1.000u Is= 385.9f
    + N= 1.000 M= 392.5m VJ= 621.9m Fc= 500.0m Cjo= 1.592n Tt= 13.61n


    ends PSMN8R5_40MSD

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